| 摘要 |
A hot electron transistor comprises, in a stack, elongate semiconductor emitter (29) and base regions, and an elongate semiconductor collector region (43) which is doped such that a 2-dimensional electron gas is formed close to the interface between the base and collector regions. Two gate regions (35, 37) are disposed on opposite sides of the stack to apply an electric field to the electron gas in a plane parallel to the plane of the interface. <IMAGE> |
