Process of making a self-aligned contact window in integrated circuits.

摘要

A self aligned contact to the substrate(e.g. 1) in the region between two gate electrodes(e.g. 3) is formed by depositing a conformal dielectric layer(e.g. 13) and patterning to form a contact window(e.g. 17). The conductive elements of the gate electrode(e.g. 3) are not contacted because of etch rate differentials between the conformal dielectric(e.g. 13) and the insulating elements(e.g. 11) of the gate structure(e.g. 3).