SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The semiconductor device is mfd. by (a) growing a field oxide film (101) on the semiconductor substrate (100) to define an active region, (b) forming a gate electrode (1) and a source/drain region (2,3) on the active region, (c) forming a first electroconductive layer (4) on the fixed film (101), (d) forming a trench (10) on the substrate within the region (2), (e) forming a first insulating layer (5) on the electrode (1) and the layer (4), (f) forming a diffusion-hindering layer (12) on the layer (5), and (g) forming a second electroconductive layer (13) on the layer (12) to contact a part of the region (2).