发明名称 |
NUCLEATION ENHANCEMENT FOR CHEMICAL VAPOR DEPOSITION OF DIAMOND |
摘要 |
2125873 9313242 PCTABS00024 A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process.
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申请公布号 |
CA2125873(A1) |
申请公布日期 |
1993.07.08 |
申请号 |
CA19922125873 |
申请日期 |
1992.12.18 |
申请人 |
UNIV NORTH CAROLINA |
发明人 |
STONER BRIAN R;GLASS JEFFREY T;HOOKE WILLIAM M;WILLIAMS BRADLEY E |
分类号 |
C30B29/04;C23C16/02;C23C16/26;C23C16/27;C23C16/458;C23C16/50;C23C16/511;C30B25/10;(IPC1-7):C23C16/26 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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