发明名称 Fabrication of discrete thin film wiring structures
摘要 Multilayer thin film structures are fabricated in a parallel manner by creating testable sub-units and then joining them together to form a finished three-dimensional wiring matrix. Thus, there is disclosed a process for the fabrication of a thin film wiring structure including the steps of: forming a core wiring structure which includes the steps of: a. providing a low expansion, metallic, patterned core material; b. encapsulating the core material in a dielectric material; c. forming vias in the dielectric material; and d. metallizing the dielectric material in the vias and on the surface of the dielectric material; forming at least one cover laminate which includes dielectric material and a low expansion, metallic carrier; laminating the at least one cover laminate to the core wiring structure wherein the dielectric material of the cover laminate is in contact with the core wiring structure; forming vias through the cover laminate, the vias communicating with the vias in the core wiring structure; and filling the vias in the cover laminate and the core wiring structure with a conductive material, thereby forming a thin film wiring sub-unit. Thereafter, a plurality of such sub-units are fabricated simultaneously, tested and then stacked and aligned on a stiffener, such as multilayer ceramic substrate, before being laminated to form a three-dimensional wiring matrix.
申请公布号 US5224265(A) 申请公布日期 1993.07.06
申请号 US19910783959 申请日期 1991.10.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DUX, JOHN B.;POETZINGER, JANET L.;PRESTIPINO, ROSEANNE M.;SIEFERING, KEVIN L.
分类号 H01L21/48;H01L23/538;H05K1/05;H05K1/09;H05K3/28;H05K3/40;H05K3/42;H05K3/46 主分类号 H01L21/48
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