| 摘要 |
PURPOSE:To obtain a transistor without strains in the curve of voltage and current between a source and a drain by a method wherein N<+> layers of unnecessary parts are removed by a lift-off method, when the source region and the drain region constituted of the N<+> layers are formed. CONSTITUTION:A thin films Si layer 102 is grown on a substrate 101 constituted of glass, ceramic, etc., than an Mo layer 103 is adhered thereon, and unnecessary parts thereof are removed by a photo etching, accordingly the remnant layers 103 are turned as the mask for lift-off. Next, the N<+> layers 104-2 and 104-1 are grown while breaking off on and between the masks, then the masks are lifted off with the N<+> layers 104-2 thereon, and accordingly the N<+> layers 104 at a fixed interval are made to remain on the Si layer 102. Thereafter, the source electrode 106 and the drain electrode 107 constituted of Mo are formed on the N<+> layers 104-1, and a gate electrode 113 is provided therebetween via a gate insulation layer 109. |
