| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable extremely high pixel density, by using a substrate having at least multiple structure composed of an insulating carrier layer and a silicon semiconductor single crystal thin film layer formed on it. SOLUTION: For example, a light valve device is composed of a driving substrate 1, an opposite substrate 8 arranged in opposition to the driving substrate 1, and electro-optical substance layers, for example, a liquid crystal layer 9 arranged between the driving substrate 1 and the opposite substrate 8. The driving substrate 1 has an at least double-layer structure composed of a carrier layer 2 made out of quartz glass, and a single crystalline silicon semiconductor film layer 3 having a crystal orientation of <100> 0.0±1.0 deg.. A driving circuit is composed of an integrated circuit formed in this single crystal silicon semiconductor film layer 3. And each pixel electrode 12 formed in the pixel regions 5 integrated circuit chips 4 acts on the liquid crystal layer 9 excited selectively by the conduction of a transistor element connected to the electrode, controls its light transmitting property, and functions as a light valve.</p> |
