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发明名称
REACTIVE ION ETCHING FOR POLYCRYSTALLINE SILICON FILM
摘要
申请公布号
JPH05166768(A)
申请公布日期
1993.07.02
申请号
JP19910354068
申请日期
1991.12.19
申请人
NEC YAMAGATA LTD
发明人
ORIHARA SHINOBU
分类号
H01L21/302;H01L21/3065
主分类号
H01L21/302
代理机构
代理人
主权项
地址
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DRAWER
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