| 摘要 |
PURPOSE:To realize baking at a low temperature and improve the reducibility resistance in a baking process and also such characteristics as Q, temperature coefficient of dielectric constant, specific resistivity, etc. CONSTITUTION:When B2O3, SiO2 and PbO are represented as by-components by Xmol.%, Ymol.% and Zmol.%, respectively, to 100 parts by weight of a main component consisting of TiO2 of 22-43wt.%, ZrO2 of 38-58wt.% and SnD2 of 9-26wt.%, the following additives are used 5-35 parts by weight of a composition which is within a range enclosed by a polygon whose apexes are Point A (X, Y, Z), Point B (X, Y, Z), Point C (X, Y, Z) and Point D (X, Y, Z), A (0, 25, 75), B (25, 0, 75), C (70, 0, 30) and D (0, 70, 30). |
