| 摘要 |
PURPOSE:To provide a semiconductor memory of a pseudo static RAM, etc., for which a real array division is made without increasing the hardware amount of a peripheral circuit, to reduce the charging current of bit line accompanying the reading-out of stored data or refreshing operation and to reduce the electric consumption of the pseudo static RAM, etc. CONSTITUTION:Complementary bit lines BO* to Bn* constituting the memory array MARY of a peudo static RAM (PSRAM) are plurally divided in their extention directions and when word lines WO to Wp arranged on the sense amplifier side SA become a selective state among the divided complementary bit lines BO* to Bn*, switches MOSFET Q3 and Q4 which are made an OFF state selectively are provided. |
