| 摘要 |
PURPOSE:To omit the formation of a diffusion preventative barrier metal by forming a gold stud bump on an aluminum electrode of semiconductor components, such as IC with a wire bonder and another stud bump thereon with solder. CONSTITUTION:A gold stud bump 3 is formed on an aluminum electrode 2 of a semiconductor component 1, such as IC at first and then a soldered stud bump 4 is formed thereon. |
