| 摘要 |
<p>PURPOSE:To prevent any hillock from being produced on a lower electrode and a lower wiring even thought the electrode and wiring are formed with an Al alloy by forming a protective insulating film covering a surface with a metal oxide film to reduce the number of hating in the fabrication process. CONSTITUTION:A gate insulating film 2 and an interlayer insulating film 5 are SiN films formed by a plasma CVD device. A protective insulating film 11, as a metal oxide film, is provided by forming a metal film made of an Al alloy containing pure Al or a small amount of high melting point metal (Ti, Ta, etc.), and oxidizing the metal film. Accordingly, since the protective insulating film 11 is formed at low temperature, there can be reduced the number of times of heating to several hundreds of C of a gate electrode G and a gate wiring being the lower electrode and the lower wiring respectively in a fabrication process. Hereby, the gate electrode G and the gate wiring can be formed with an Al alloy containing a little amount of high melting point metal.</p> |
