| 摘要 |
PURPOSE:To prevent that a metal for fixation use such as a solder or the like comes into direct contact with a semiconductor substrate and to enhance the reliability of a semiconductor device by a method wherein a recess-shaped groove corresponding to the boundary of semiconductor devices is formed in the rear of the semiconductor substrate, a metal film is then formed on the rear including the groove and the semiconductor substrate is divided along the groove. CONSTITUTION:A plurality of sets of electrodes 2 constituting a plurality of semiconductor devices are formed on one main face of a semiconductor substrate 1; grooves 1a corresponding to boundaries of the semiconductor devices are formed on the other main face of the semiconductor substrate 1. After that, metal films 3 to 5 are formed on the other main face of the semiconductor substrate 1 including the grooves 1a; the semiconductor substrate 1 is divided along the grooves 1a. For example, electrodes 2 constituting several hundred FETs are formed on the surface of a semiconductor substrate 1 composed of GaAs; after that, cutouts are formed in boundaries of the FETs on the rear. Then, a Ti film 3, a Pt film 3 and an Au film 5 are formed sequentially on the rear; after that, the substrate 1 is divided into chips corresponding to the individual FETs.
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