发明名称 SEMICONDUCTOR SUBSTRATE DICING METHOD
摘要 <p>PURPOSE:To provide generation of faulty short-circuit between electrodes, and to improve the reliability of the products by a method wherein the metallizing film on the back side of a pellet located directly under a scribe line, is selectively removed before dicing. CONSTITUTION:The scribe line 4, drawn by patterning on the wiring metal layer 3 of a semiconductor substrate 1, is recognized by a pattern recognition part 5 through a protection film 6, a pulse laser beam 7 is applied to the surface of the backside metallizing layer 2 directly under the scribe line 4, a local laser annealing is conducted, and an alloy layer 9 is formed. Blade sawing is conducted with a diamond blade 8 from above the scribe line 4, and full-cut dicing is conducted as deeply as the groove reaches the alloy layer 9. As a result, even when the sawing blade reaches the back side metallizing film 2, microcrack pieces produced in the vicinity of the end of the groove by dicing in the back side of a pellet are supported by the metallizing film in the back side because the metallizing film 2 has lost metallic mechanical characteristics.</p>
申请公布号 JPH05166926(A) 申请公布日期 1993.07.02
申请号 JP19910328553 申请日期 1991.12.12
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 AKASAKI HIROSHI;OTSUKA KANJI
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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