摘要 |
A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US |
发明人 |
BAYER, THOMAS, W-7032 SINDELFINGEN, DE;GRESCHNER, DR. DIPL.-PHYS., JOHANN, W-7401 PLIEZHAUSEN 1, DE;WEISS, HELGA, W-7030 BOEBLINGEN, DE;WOLTER, DR. DIPL.-PHYS., OLAF, W-7042 AIDLINGEN 3, DE;WICKRAMASINGHE, DR., DIPL.-PHYS., HEMANTHA K., NEW YORK 10514, US;MARTIN, DR., DIPL.-PHYS., YVES, NEW YORK 10510, US |