发明名称 Plasma-supported deposition of thin insulating layers on substrates - buy vaporising insulating material and ionising in plasma of low energetic arc discharge
摘要 Plasma-supported deposition of thin insulating layers on substrates comprises vaporising an insulating material or a material, which is deposited as insulating material in a reactive atmos., and ionising in a plasma of a low energetic arc discharge. The low energetic arc discharge is produced between a hollow cathode (4) and an anode, in which the anode (5) is heated to a temp. above the melting temp. of the vaporised material or the decompsn. temp. of the reaction prod. of the vaporised material. An appts. for carrying out the process is also claimed. USE/ADVANTAGE - To form optically transparent, mechanically or chemically resistant oxide and nitride layers.
申请公布号 DE4221361(C1) 申请公布日期 1993.07.01
申请号 DE19924221361 申请日期 1992.06.29
申请人 VTD-VAKUUMTECHNIK DRESDEN GMBH, O-8017 DRESDEN, DE 发明人 GRIMM, WERNER, DR.RER.NAT., O-8054 DRESDEN, DE;CERNOHORSKY, HAGEN, O-8028 DRESDEN, DE;FALZ, MICHAEL, O-8038 DRESDEN, DE;WILBERG, RUEDIGER, O-8019 DRESDEN, DE
分类号 C23C14/32;H01J37/32 主分类号 C23C14/32
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