| 摘要 |
PURPOSE: A method for implanting an ion using a disk is provided to minimize a delay of process, and prevent the wafer from breaking. CONSTITUTION: A disk of ion implanter of batch type performs a rotational motion using ion beam as an axis, and a vertical motion. The disk(12) performs a motion following a surface formed by a progress direction of ion beam and a vertical line of wafer(16), and performs a motion following a surface formed by a progress direction of ion beam and a horizontal line of wafer. In the ion implantation method of a semiconductor wafer, many wafers are mounted on the disk. The ion beam are scanned on each wafer with rotating the disk(12). While elevating the disk, the ion beam are scanned on each wafer.
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