A semiconductor laser device.

摘要

A semiconductor laser device includes a substrate (11); a double hetero structure having an n-type cladding layer (13), an active layer (15), and a p-type cladding layer (18), which is formed on an upper face of the substrate; and electrodes (111,112) formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer (16) formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch. <IMAGE>