A method for fabricating an AlGaInP semiconductor light emitting device.

摘要

A method for fabricating an AlGaInP semiconductor light emitting device having substrate (1) and a multilayer structure including an AlGaInP first semiconductor layer (7) formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor (7) is exposed, irradiating with plasma beams an oxide film (12) formed on the exposed first exposed layer (7) with the substrate temperature being kept at 500 DEG C or less, so as to remove the oxide film (12) form the first semiconductor layer (7) and growing a second semiconductor layer (11) on the first semiconductor layer (7).