发明名称 Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
摘要 A semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing at least a portion of a circuit pattern and a method for producting such semiconductor integrated circuit device. The circuit pattern is formed on the semiconductor substrate. A field shield plate is formed on the major surface of the semiconductor substrate for electrically separating respective elements constituting the circuit. The circuit pattern includes a fuse element. The fuse element is provided on the field shield plate. The portion of the field shield plate lying directly below the fuse element is isolated from other portions of the field shield plate. In such semiconductor integrated circuit device, the portion of the field shield plate lying directly below the fuse element is separated from other portions of the field shield plate, so that short-circuiting between the semiconductor substrate and the field shield plate cannot occur even when the laser beam is irradiated with a laser beam deviation at the time of severing of the fuse element.
申请公布号 US5223735(A) 申请公布日期 1993.06.29
申请号 US19920915384 申请日期 1992.07.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KINOSHITA, MITSUYA;ARIMOTO, KAZUTAMI;FURUTANI, KIYOHIRO
分类号 H01L21/768;H01L23/525;H01L27/118 主分类号 H01L21/768
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