| 摘要 |
A method and apparatus for doping silicon spheres (48) with a solid phosphorous source (41, 42) is disclosed. Two solid sheets (41, 42) of solid phosphorous source are held in a chamber (32) and aligned substantially parallel to one another for holding the plurality of silicon spheres therebetween. The chamber (32) temperature is increased to vaporize the sheets (41 and 42) to evenly diffuse phosphorous vapor into the silicon spheres (48).
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