| 摘要 |
An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate voltage-to-output current (drain) transfer characteristic of the FET results. In addition, the electrical characteristics of the FET may be adjusted by changing the spacing of the drain and source diffusions from the gate.
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