METHOD OF CLEANING SILICON SURFACE AT HIGH CLEANNESS AND METHOD OF PLANARIZING THE SAME

摘要

PROBLEM TO BE SOLVED: To remove metal impurities beneath the surface of Si, the main cause of surface defects on the Si surface, especially Ni of a transition metal, to make a high-cleanness Si surface and to planarize the Si surface accompanied therewith. SOLUTION: An Si surface containing metal impurities beneath the surface is hydrogenized by the vapor-or liquid-phase method to deposit the metal impurities on the Si surface, and the metal impurities are removed to make a high- cleanness Si surface and planarize it at the atomic level.