| 摘要 |
PROBLEM TO BE SOLVED: To realize a method for manufacturing a semiconductor having suitable conditions of film forming a ruthenium on a wafer according to an MOCVD method by obtaining a good coverage without reducing a film forming speed. SOLUTION: The method for manufacturing the semiconductor comprises the steps of maintaining the wafer 21 at a film forming temperature of 250 to 350 deg.C by a suscepter 20, and sending a liquid raw material (raw material concentration of 0.1 to 1 mol/liter) obtained by dissolving a Ru (EtCp)2 in an organic solvent at a flow rate of 0.1 to 10 cc/min to a vaporizer 22. The method further comprises the steps of supplying an oxygen of a concentration of 1 to 30% by the vaporizer 22 together with another carrier gas from a gas jet port 25 into a reaction chamber 17. The method also comprises the step of depositing the ruthenium on the wafer 21 with a gap between the wafer 21 and a shower head 26 of 1 to 20 mm at a pressure in the chamber 17 of 666 to 6664 Pa (5 to 50 Torr). Thus, the film forming speed can be set to 1 nm/min or more, and the coverage can be set to 40% or more.
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