发明名称 SENSE AMPLIFIER WITH IMPROVED SENSITIVITY
摘要 A high speed sense amp supplies current to a bit line connected to a memory cell transistor and also detects a potential of the bit line. The potential of the bit line varies according to a conductive state of the memory cell transistor. The sense amp includes a load element and a first transistor connected in series between a first potential and the bit line. A second transistor is connected between the first potential and the bit line. The bit line is input to an inverter that has its output terminal connected to a gate of the first transistor. A differential amp has a first input terminal connected to a reference potential and a second input terminal connected to a node between the load element and the first transistor. The output of the differential amp indicates a difference between the reference potential and the bit line potential.
申请公布号 US2002000841(A1) 申请公布日期 2002.01.03
申请号 US19990270289 申请日期 1999.03.16
申请人 RAI TOSHIKI;YOSHIKAWA SADAO 发明人 RAI TOSHIKI;YOSHIKAWA SADAO
分类号 G11C7/06;G11C16/26;(IPC1-7):H03F3/45 主分类号 G11C7/06
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