| 摘要 |
PROBLEM TO BE SOLVED: To provide a microwave plasma processing apparatus which is high in plasma processing uniformity. SOLUTION: A conductor member 12 is provided at the center of a dielectric member 11 of a nearly circular shape, through which microwaves are propagated so as to pass therethrough in the thickness direction. Installation of the conductor member 12 causes presence of strong electric-field regions in a plurality of radial directions of the dielectric member 11, which is distributed nearly symmetrically, with respect to an axis on its diameter. In response to these strong field regions, plasmas are generated in a processing chamber 2 of a reaction vessel 1, and dispersed to provided a uniform plasma. A sample W on a sample base 3 is processed by the plasma, having a uniform density. |
