发明名称 READ/PROTECT CIRCUIT FOR NON-VOLATILE MEMORY
摘要 PROBLEM TO BE SOLVED: To easily change the size of a read/protect memory, and to design a memory according to the kinds of device, in a short time. SOLUTION: Since a read/protect memory region 4 is formed in the same memory mat as a main memory region 2, an EEPROM cell being exclusive for storing read/protect data and analog control circuit for writing read/protect data in this EEPROM cell are not required exclusively and, therefore chip size can be reduced.
申请公布号 JP2002015584(A) 申请公布日期 2002.01.18
申请号 JP20000196428 申请日期 2000.06.29
申请人 SANYO ELECTRIC CO LTD 发明人 HODAKA KAZUO
分类号 G06F12/14;G06F21/02;G11C7/24;G11C16/02;G11C16/22;G11C29/00 主分类号 G06F12/14
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