| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern of a film to be worked with a good worked shape can be formed. SOLUTION: The pattern forming method has a step for forming an underlayer film 202 by coating the top of a film 201 to be worked with a solution for the underlayer film prepared by dissolving a novolak compound obtained by dehydration condensation of a naphthol derivative and formaldehyde or a novolak compound obtained by dehydration condensation of an anthracene derivative and formaldehyde in a solvent, a step for forming a resist film 203 on the underlayer film 202, a step for forming a resist pattern 204 by patternwise exposing the resist film 203, a step for forming a pattern 205 of the underlayer film by transferring the resist pattern 204 to the underlayer film 202 and a step for forming a pattern 206 of the film to be worked by transferring the pattern 205 to the film 201 to be worked. |
