| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, in which the band gap of ZnO-based material is made narrow while using safe harmless material, and luminous characteristic can be improved by using ZnO-based compound semiconductor, having little crystal defect and superior crystallinity for the active layer material of a semiconductor light-emitting element of a blue color system LED or LD, in which the active layer is clamped by clad layers. SOLUTION: The active layer 5, in which a light is generated by current injection is pinched by an N-type clad layer 4 and a P-type clad layer 6, whose band gap energy is larger than the active layer 5, which is composed of compound semiconductor containing Zn, O and group VI elements other than O. |
