| 摘要 |
PURPOSE:To provide a photomask capable of having the resolution of each pattern in a desired dimension, even when a normal arrangement pattern and an abnormal arrangement pattern are mixed. CONSTITUTION:In a photomask for manufacturing a semiconductor 1, having the mixture of a normal arrangement part 2 having a transparent region pattern on a part of an opaque region, and provided with a phase shifter for inverting the phase of transmitted light, on one of a pair of adjacent patterns, and an abnormal arrangement part 3 except the part 2, a translucent layer 14 for attenuating the quantity of the transmitted light of the pattern of the normal arrangement part 2, is provided. |
