| 摘要 |
PURPOSE:To obtain a positive type photoresist compsn. excellent in resolving power, the dimensional reproducibility of a mask, the aspect ratio of cross-sectional shape, the perpendicularity of a side wall, development latitude and heat resistance by incorporating a specified sulfonic ester and an alkali-soluble resin. CONSTITUTION:This positive type photoresist compsn. contains 1,2- naphthoquinonediazido-5-(and/or-4-)sulfonic ester of a polyhydroxy compd. represented by the formula and an alkali-soluble resin. In the formula, each of R1-R4 is H, hydroxyl, halogen, alkyl, alkoxy, nitro, alkenyl, aryl, aralkyl, etc., each of (a), (b), (d) and (e) is 0 or an integer of 1-3, (c) is 0 or 1, (a)+(b)+(c)+(d)+(e)>=2, at least one of (a) and (d) is >=1 and at least one of (b) and (e) is >=1. The amt. of the sulfonic ester used is 5-100 pts.wt. per 100 pts.wt. of the alkali-soluble resin. |
