| 摘要 |
PURPOSE:To improve crystal quality on the regrowth interface and enable the entitled method to applicate to a semiconductor laser of arbitrary structure and the like, by providing at least two times crystal growth processes, and making a first epitaxial material of the regrowth contains Al. CONSTITUTION:In the process for manufacturing an optical device having an active layer of a semiconductor laser or the like on a semiconductor substrate, at least two times crystal growth processes are provided, and the first epitaxial material of regrowth is made to contain Al. A broken line 101 shows the oxygen profile of an epitaxial surface just before the second crystal growth. It can be known that oxygen permeates to a depth of 200 Angstrom or deeper. A full line 102 shows the oxygen concentration profile in the vicinity of the regrowth interface after the second crystal growth. It can be known that the oxygen concentration sharply decreases in the vicinity of the regrowth interface and a high concentration part vanishes. Thus the oxygen concentration in the vicinity of the regrowth interface can be restrained to be low, and an excellent regrowth interface can be made. |
