发明名称 |
PRODUCTION OF LOWER SUBSTRATE OF ACTIVE MATRIX LIQUID CRYSTAL DISPLAY |
摘要 |
<p>PURPOSE:To obtain the lower substrate of an excellent active matrix liquid crystal display free from display quality defects by preventing the spot defects by the ITO residues of a TFT array which is the lower substrate of the liquid crystal display and the drain disconnection by an ITO etching liquid. CONSTITUTION:The electrodes for the display consisting of an ITO film of a 1st layer (1st layer display electrode) 41 which is a lower layer are formed by an RF or DC sputtering device using an ITO target (In2O3+SnO2.) at <=100 deg.C substrate temp. and 50 to 300Angstrom film thickness without introducing gaseous acid gas at the time of film formation. The electrodes for the display consisting of the ITO film (2nd layer display electrode) which is the upper layer are formed by the RF or DC sputtering device using the ITO target (In2O3+SnO2.) at <=100 deg.C substrate temp. and 500 to 2000Angstrom film thickness by introducing the oxygen gas at the time of the film formation. The film quality of the ITO display electrodes 41 of the 1st layer which is the lower layer is made more amorphous than the 2nd layer 42 which is the upper layer.</p> |
申请公布号 |
JPH05158071(A) |
申请公布日期 |
1993.06.25 |
申请号 |
JP19910323500 |
申请日期 |
1991.12.09 |
申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
ITO HIROSHI;KOIZUMI MASUMI;SHIMIZU MARI;NOMOTO TSUTOMU |
分类号 |
G02F1/133;C01G19/00;G02F1/1343;G02F1/136;G02F1/1368 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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