| 摘要 |
PURPOSE:To provide a TFT load type semiconductor memory cell wherein the OFF current of a thin film transistor(TFT) is reduced. CONSTITUTION:This memory cell is equipped with a thin film transistor comprising a first insulating film 11 which has a projecting insulator 16a, and first conductive films (12 and 14) and second conductive films (14 and 12), with a second insulating film 13 as a middle layer, on the surface of the above first insulating film including the above projecting insulator. |
