| 摘要 |
PURPOSE: To enable a semiconductor device to be improved in the extent of integration and micronized in size by a method, wherein an upper electrode layer formed on the upper surface of a peripheral structure and connected to the one surface of a lower electrode is improved in uniformity. CONSTITUTION: A projection 10a left in a prescribed region by selectively etching a semiconductor device 10 as deep as prescribed, a lower electrode layer 16 which is formed covering the surface and inner side of the projection 10a, a peripheral structure (a field oxide film 12, a gate electrode 18, a storage electrode 30, a dielectric film 32, a plate electrode 34 and others) formed surrounding the projection 10a, and an upper electrode layer 50 formed on the upper surface of the peripheral structure and connected to the surface of the lower electrode layer 16 are provided. Then the upper conductive layer (bit line) 50 is improved in uniformity. By this setup, a semiconductor device can be improved in the degree of integration and micronized in size. |
