SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To increase a fault detection rate in a burn-in test, to reduce the number of test processes and to promote the low cost of a dynamic RAM or the like and its testing device by realizing a semiconductor memory device such as the dynamic RAM or the like wherein a test mode or the like due to the degeneracy of an address can be set easily. CONSTITUTION:A burn-in test for a dynamic RAM or the like is performed in such a way that, e.g. four word lines W0 to W3 are set simultaneously to a selection state. A high-voltage mode-setting signal which is used to set the burn-in test is input from an address input terminal A0 corresponding to an X-address signal AX0 which is degenerated by it. A selection voltage VCH which is output from a word-line selection-voltage generation circuit VCHG is transmitted in an ordinary operating mode; an external power-supply voltage VCC is transmitted in a burn-in test mode.