| 摘要 |
PURPOSE:To form a non-single crystal semiconductor film on a substrate in a state that the substrate is always put in a plasma atmosphere and to avoid initial plasma damage due to ON/OFF control of plasma by a method wherein the substrate with the non-single crystal semiconductor film formed thereon in a film-forming chamber is transferred in other film-forming chamber as putting in the plasma atmosphere. CONSTITUTION:A pressure in an N-type layer film-forming chamber 13 is adjusted and thereafter, a first high-frequency power supply 181 is turned-ON to start the film formation of an N-type layer. When the thickness of the N-type layer reaches up to a prescribed film thickness, hydrogen gas 362 is introduced in an I-type layer film- forming chamber 14 and a pressure in the chamber 14 is made equal with the pressure in the chamber 13. After that, a second high-frequency power supply 182 is turned-ON and hydrogen plasma is generated between a second high-frequency electrode 192 and a second heater 222 which is used in combination as an auxiliary electrode. In such a way, it is possible to always put respectively a growth surface of a glass substrate 30, the interface between the N-type and I-type layers and the interface between the I-type layer and a P-type layer in a hydrogen plasma atmosphere from the time of starting of the film formation of the N-type layer to the time of end of the film formation of the P-type layer. |
