| 摘要 |
PURPOSE:To prevent an impurity within a wiring or an electrode from being diffused exceeding a depth of a diffusion layer even if it is diffused into a semiconductor substrate by allowing the wiring or the electrode to consist of a material where the impurity is mixed and providing a film thickness and an amount of impurity where no impurity region is formed exceeding a desired depth of the diffusion layer. CONSTITUTION:A title item is provided with a diffusion layer 5 with a desired depth which is formed on a surface of a semiconductor substrate 1 and a wiring 8 or an electrode which is formed on the semiconductor substrate 1 so that it contacts the diffusion layer 5. In such a semiconductor device, the wiring 8 or the electrode consists of a material where an impurity is mixed and a film thickness and an amount of impurity where no impurity region is formed are provided exceeding a desired depth of the diffusion layer 5. For example, when performing heat treatment of the film thickness and the amount of doped impurities of the wiring layer 8 which consists of polysilicon by implanting phosphorus ions into the wiring layer 8, it is so set that no phosphorus within the wiring layer 8 is diffused exceeding a depth of the N<+> diffusion layer 5 and no undesired impurity region is formed. |
