发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remove lowering of step covering property of an upper layer wiring due to effect of a lower layer isolation insulating film, etc., and to reduce wiring defect by making the upper layer wiring cross with a lower layer wiring on an isolation region which is not affected by the lower layer isolation insulating film, etc. CONSTITUTION:In a crossing region of an upper layer wiring 3 to a lower layer wiring 4, the upper layer wiring 3 is arranged on at least isolation regions 2a, 2b which cross with the lower layer wiring 4. For example, in a region wherein the upper layer wiring 3 crosses with the lower layer wiring 4, it is arranged on the isolation region 2b which crosses with the lower layer wiring 4 at right angles. That is, the upper layer wiring 3 is made to make a detour not to cross on the isolation insulating film 2 of a part along lower layer wiring 4. The upper layer wiring 3 to a step part of the low wiring 4 formed based on the conditions is reliably formed on a flat part through a field insulating film 7 on a supporter layer 5. Thereby, it is possible to reduce effect of current concentration by lowering of step coating properties in the upper layer wiring 3 and to reduce wiring defect.
申请公布号 JPH05160277(A) 申请公布日期 1993.06.25
申请号 JP19910318132 申请日期 1991.12.02
申请人 OKI ELECTRIC IND CO LTD 发明人 ISHIKIRIYAMA MAMORU
分类号 H01L23/522;H01L21/768;H01L23/482;H01L23/528 主分类号 H01L23/522
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