| 摘要 |
PURPOSE:To enable the formation of extremely fine patterns with high accuracy by forming the patterns while using a negative type resist having a reverse bleaching characteristic and exposing light having the wavelength region existing off the max. sensitivity wavelength region of the resist. CONSTITUTION:The photoresist, the base resin of which is substantially transparent to the exposing light, and which has the reverse bleach characteristic of the light absorption increasing with an increase in exposure is used. Since the exposing light having the wavelength region off the max. sensitivity wavelength region of the resist is used, the initial transmittance of this resist is high and the exposing light arrives sufficiently at the bottom of the resist. The solubility of the bottom of the resist is, therefore, sufficiently decreased and an undercut is prevented. Further, the resist is substantially transparent to the exposing light and, therefore, a development contrast is sufficiently increased by increasing the amt. of a photosensitive agent to be added. For example, a dotted line 12 of Fig. indicates the exposure on the wafer right under a mask edge in the case of use of the reverse bleaching. |
