| 摘要 |
PURPOSE:To form an open groove with no residual resist by a single treatment when plural grooves having a high aspect ratio formed in a semiconductor substrate are selectively sealed with a resist. CONSTITUTION:A substrate 2 is coated with a positive type resist 7 having high sensitivity and all of plural grooves in the substrate 2 are filled with the resist 7 by selective exposure and development. The substrate 2 is then coated with a positive type resist 9 having low sensitivity, only the groove 4 to be opened is selectively exposed and the resist 9 on the groove 4 and the resist 7 in the groove 4 are simultaneously dissolved and removed. |
