| 摘要 |
PURPOSE:To reduce the junction leak by preventing a first highly concentrated impurity region constituting a Hi-C cell structure from being in contact with a third impurity region constituting the source/drain of a transistor. CONSTITUTION:A plate electrode 7 is formed to overhang from the surface of a silicon substrate 1, where a p-type impurity region 5 is formed, by a given distance to a position near a transfer gate electrode 8. Subsequent to the formation of an n<+>-type impurity region 9 in a self-alignment manner by use of the plate electrode 7 and transfer gate electrode 8 as the mask, the n<+>-type impurity region 9 is formed away from the p-type impurity region 5. Therefore, it is possible to form an Hi-C cell structure where the n<+> impurity region 9 serving as the source/drain, and the p-type impurity region 5 immediately below the plate electrode 7 are not in contact, thus reducing the junction leak. |
