| 摘要 |
PURPOSE:To obtain the technique reducing sufficiently power for a circuit including transistors (TRs) with a low threshold voltage without deteriorating the characteristic of the circuit including the low threshold voltage. CONSTITUTION:A P-channel MOS transistor (TR) M4 whose threshold voltage is comparatively high is provided between a drain and a gate of a MOS TR M2. When the TRM4 is turned off by a control signal PON4x, a current flowing through MOS TRMI is blocked by a MOS TRM3 to reduce the power. |
