| 摘要 |
PURPOSE:To polish SOI substrates constantly to a prescribed thickness. CONSTITUTION:Grooves 1B are provided to divide an SOI layer which is polished to be as thick as a few mum into island-like regions 1A correspondent to chips or element regions in size, a stopper layer 4 whose thickness is equivalent to the required final thickness of the SOI layer is formed inside the groove 1B, an abrasive cloth slightly larger than the island-like region 1A in diameter is mounted on the pressing plane of a spin-polishing jig 11, and the abrasive cloth is made to scan the SOI layer to abrade until the stopper layer 4 is exposed. The thickness of the unpolished part of the SOI layer is measured, and a pressure applied onto the abrasive cloth or the rotating speed of the polishing jig 11 is controlled basing on the thickness data concerned. By this setup, an SOI layer six inches in diameter can be polished to be 0. 1-1mum uniform in thickness.
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