| 摘要 |
The DRAM cell is mfd. by (a) forming a field oxide film (22), a gate oxide film (23), a gate poly (24) and a side wall spacer (25) on the substrate (21), (b) forming a high voltage oxide film (26) on the whole substrate, (c) etching the film (26) to form a contact hole, covering the hole with a first monocrystalline silicon film (27) and a photosensitive material (30), and then etching the film (27) to form a pattern of the film (27), (d) covering a second monocrystalline silicon film (28) on the film (27), and then implanting an arsenic ion (As) on the substrate, (f) covering the film (28) with a photosensitive material, and then etching the film (28) to form a pattern, and (g) covering a polycrystalline silicon film (29) on the whole substrate, and then etching it to form a pattern.
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