MIST TYPE DYNAMIC RANDOM ACCESS MEMORY CELL AND METHOD FOR FABRICATING THEREOF

摘要

The DRAM (Dynamic Random Access Memory) cell consists of one transistor and one capacitor. The capacitor is composed of the trench capacitor and the stack capacitor perpendicular to the trench capacitor. The stack capacitor is formed on the transistor part. The trench depth of the trench capacitor is different from that of the trench capacitor adjoining memory cell. The stack capacitor of a first memory cell including a relavively shallow-depth trench capacitor has a larger storage electrode area than the stack capacitor of a second memory cell including a relatively deep-depth trench capacitor.