P-channel or N-channel permeable base transistor - has laterally structured base layer forming part of PN junction acting as controlled charge zone

摘要

The transistor has a layer structure and at least one laterally structured base for controlling a charge zone provided by a pn junction with p type and n type layers, one of which is provided by the laterally structured base. At least one of the two opposing surfaces of the laterally structured base has an additional layer with the same lateral structure for reducing the parasitic charge capacitance. Pref. the latter additional layer has a doping concentration reduced by a factor of 10. Openings in the laterally structured base form individual current channels using gallium arsenide doped with aluminium, with an individual doping or material profile for each channel. USE/ADVANTAGE - For GaAs permeable base transistor or permeable junction base transistor. Reduced parasitic space charge capacitance gives increased switching speed.