发明名称 SEMICONDUCTOR DEVICE AND MICROWAVE PROCESS FOR ITS MANUFACTURE
摘要 <p>Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer (12a, 12b) is being deposited.</p>
申请公布号 WO1993012546(A1) 申请公布日期 1993.06.24
申请号 US1992010128 申请日期 1992.11.23
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