DUENNSCHICHTTRANSISTOR.

摘要

A thin film transistor having an active layer (19, 24) comprising amorphous silicon carbide (a-Si1-xCx) formed between source and drain electrodes (14,15), a gate insulating film (17) formed in contact with the active layer (19, 24) and a gate electrode (18) formed in contact with the gate insulating film (17), the active layer. The gate insulating layer (17, 23) can be made of an amorphous silicon carbide layer having a carbon content greater than the carbon content of the active layer (19, 24). The active layer (24) can further ba a laminated structure of well layers and barrier layers, both made of hydrogenated amorphous silicon carbide with different carbon content, or a laminated structure of well layers made of hydrogenated amorphous silicon and barrier layers made of hydrogenated amorphous silicon carbide.