发明名称 |
ORGANIC FIELD EFFECT TRANSISTOR WITH AN ORGANIC DIELECTRIC |
摘要 |
<p>A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.</p> |
申请公布号 |
EP1459392(A1) |
申请公布日期 |
2004.09.22 |
申请号 |
EP20020779719 |
申请日期 |
2002.11.21 |
申请人 |
MERCK PATENT GMBH |
发明人 |
LEEMING, STEPHEN WILLIAM;MOHIALDIN-KHAFFAF, SOAD;OGIER, SIMON DOMINIC;VERES, JANOS |
分类号 |
H01L21/368;H01L51/05;H01L21/02;H01L21/312;H01L21/336;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/20 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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